SSF1020D 100v n-channel mosfet www.goodark.com page 1 of 7 rev.2.2 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 60 i d @ tc = 100c continuous drain current, v gs @ 10v 50 i dm pulsed drain current 240 a power dissipation 143 w p d @tc = 25c linear derating factor 2.0 w/c v ds drain-source voltage 100 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.3mh 240 mj i as avalanche current @ l=0.3mh 39 a t j t stg operating junction and storage temperature range -55 to + 175 c v dss 100v r ds (on) 16m(typ.) i d 60a dpak marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SSF1020D 100v n-channel mosfet www.goodark.com page 2 of 7 rev.2.2 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 1.05 /w r ja junction-to-ambient 62 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 v v gs = 0v, id = 250a r ds(on) static drain-to-source on-resistance 16 20 m v gs =10v,i d = 30a 2.0 3.0 4.0 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.0 v t j = 125 1 v ds = 100v,v gs = 0v i dss drain-to-source leakage current 10 a t j = 150c 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v q g total gate charge 90 q gs gate-to-source charge 14 q gd gate-to-drain("miller") charge 24 nc i d = 30a, v ds =30v, v gs = 10v t d(on) turn-on delay time 18.2 t r rise time 15.6 t d(off) turn-off delay time 70.5 t f fall time 13.8 ns v gs =10v, vds=30v, r l =15, r gen =2.5 c iss input capacitance 3150 c oss output capacitance 300 c rss reverse transfer capacitance 240 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 60 a i sm pulsed source current (body diode) 240 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.3 v i s =30a, v gs =0v t rr reverse recovery time 57 ns q rr reverse recovery charge 107 nc t j = 25c, i f =60a, di/dt = 100a/s
SSF1020D 100v n-channel mosfet www.goodark.com page 3 of 7 rev.2.2 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by ma x. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the maximum current rating is limited by bond-wires.
SSF1020D 100v n-channel mosfet www.goodark.com page 4 of 7 rev.2.2 typical electrical and thermal characteristics figure 1, transfer characteristic figure 2, capacitance figure 3, on resistance vs. junction temperature figure 4, breakdown voltage vs. junction temperature
SSF1020D 100v n-channel mosfet www.goodark.com page 5 of 7 rev.2.2 figure 7. safe operation area figure 8. max drain current vs. junction temperature figure 9. transient thermal impedance curve figure 5, gate charge figure 6, source-drain diode forward voltage
SSF1020D 100v n-channel mosfet www.goodark.com page 6 of 7 rev.2.2 mechanical data min nom max min nom max a 2.200 2.300 2.380 0.087 0.091 0.094 a1 0.910 1.010 1.110 0.036 0.040 0.044 b 0.710 0.760 0.810 0.028 0.030 0.032 b1 5.130 5.330 5.460 0.202 0.210 0.215 c 0.460 0.510 0.560 0.018 0.020 0.022 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 d2 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 e 2.186 2.286 2.386 0.086 0.090 0.094 h 9.800 10.100 10.400 0.386 0.398 0.409 f 1.400 1.500 1.700 0.055 0.059 0.067 k v2 5.350 (ref) 2.900 (ref) 1.600 (ref) 8 0 (ref) 8 0 (ref) 0.063 (ref) 0.211 (ref) 0.114 (ref) symbol dimension in millimeters dimension in inches 4.83 (ref) 0.190 (ref) dpak package outline dimension
SSF1020D 100v n-channel mosfet www.goodark.com page 7 of 7 rev.2.2 ordering and marking information device marking: SSF1020D package (available) dpak operating temperature range c : -55 to 175 oc devices per unit option1 package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to-252 80 50 4000 10 40000 option2 package type units/ tape tapes/inner box units/inner box inner boxes/carton box units/carton box to-252 2500 2 5000 7 35000 option3 package type units/ tape tapes/inner box units/inner box inner boxes/carton box units/carton box to-252 2500 1 2500 10 25000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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